February 3, 2009 Samsung Electronics has developed the first four gigabit DRAM memory chip using its 50 nanometer technology. 16GB modules using the 4Gb chips use 40% less power than previous DDR3 modules thanks to higher density and half the number of chips.
The 4Gb chips operate at 1.35 volts, a 20% increase in throughput over a 1.5 volt DDR3 chip, and have a maximum speed of 1.6 Gbps.
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The 4Gb chip will make its way into 16GB registered DIMMs for servers, 8GB unbuffered DIMMs for workstations, and 8GB small outline DIMMs for laptops.
Using dual-die package technology, the 4Gb chip allows modules of up to 32GB - double that of the 2Gb chips which were state-of-the-art in September 2008.