Electronics

First 7nm node test chips developed

First 7nm node test chips deve...
A new manufacturing technique has the potential to see a whopping 20 billion transistors packed into a chip the size of a fingernail
A new manufacturing technique has the potential to see a whopping 20 billion transistors packed into a chip the size of a fingernail
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A new manufacturing technique has the potential to see a whopping 20 billion transistors packed into a chip the size of a fingernail
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A new manufacturing technique has the potential to see a whopping 20 billion transistors packed into a chip the size of a fingernail
IBM has created transistors 7nm – that's about 1/10,000th the width of a human hair
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IBM has created transistors 7nm – that's about 1/10,000th the width of a human hair

IBM Research has successfully created the first 7nm node test chip withfunctioning transistors, a development that could lead to processors that boast four times the capacity of those on the market today.

Developed in conjunction with GlobalFoundries and Samsung, the new manufacturing technique has the potential to see a whopping 20billion transistors packed into a chip the size of a fingernail.

In order to achieve this, the team used a number of non-conventionalsemiconductor manufacturing methods including the development of transistor channels made of silicon-germanium, or SiGe,rather than pure silicon. SiGe is better suited for smallertransistors because of the fact that it has higher electron mobilitythan pure silicon. Basically, when pure silicon is used, the gapbetween silicon nuclei gets so small that silicon atoms cannot carryenough current. When some germanium is added to the mix, electronmobility is increased.

These transistors are each only 7 nanometers wide – that's about 1/10,000th the width of a human hair and three times the width of a single strand of DNA. The smallest transistors in use on chips today are 14 nm wide, although 10 nm chips are in development by the likes of Intel and Samsung.

The team also used extreme ultraviolet lithography, or EUVL, for etching. Current chips areetched using an argon fluoride laser, which has a beam that is 193 nmwide. EUV beams are only 13.5 nm wide, however they are expensive and to date have been difficult to deploy on a commercial level.

We probably won’t see any 7 nmchips on the market for at least a few years because of how expensive they are to produce, but the breakthrough promises to help satisfy our appetite for more powerful, less energy-hungry devices in years to come, as well as help industry keep pace with Moore's Law as it continues the search for viable alternatives to silicon.

Source: IBM

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