May 22, 2007 Kingston Technology will be announcing important news concerning its HyperX high performance memory division during the world’s second-largest trade show, Computex Taipei, to be held in Taiwan from June 5-9, 2007. Travelers who visit the Kingston booth will witness live demonstrations of new DDR3 1500MHz HyperX and DDR2 800MHz ultra low latency HyperX memory modules. Kingston 512MB and 1GB DDR3 1066MHz HyperX memory modules recently passed Intel Platform (PMO) Validation, paving the way for the next generation of high-performance computing. DDR3 technology offers significant memory performance gains, at lower voltage and less power consumption.
Expected to be twice as fast as today’s highest speed DDR2 memory, DDR3's greater bandwidth is a perfect match for systems using dual and quad core processors. The lower voltage of DDR3 (moving to 1.5v versus 1.8v with DDR2) provides a more efficient memory solution for both mobile and server platforms. “I am pleased to see that Kingston is developing DDR3 memory technology, which will support Intel’s high-performance desktop platforms in 2007,” said Steve Peterson, Director of Client Chipsets, Intel Corporation. “This technology will also provide the bandwidth headroom necessary to support Intel’s product roadmap in the future.”
Initially launching in 512MB and 1GB capacity modules as well as 1- and 2GB memory kits, the new Kingston HyperX and ValueRAM DDR3 1066MHz modules are the cutting edge of memory technology. Kingston is currently sampling modules in limited quantities in capacities up to 1GB to support the next generation computer platforms shipping later in 2007.
