February 3, 2009 Samsung Electronics has developed the first four gigabit DRAM memory chip using its 50 nanometer technology. 16GB modules using the 4Gb chips use 40% less power than previous DDR3 modules thanks to higher density and half the number of chips.
The 4Gb chips operate at 1.35 volts, a 20% increase in throughput over a 1.5 volt DDR3 chip, and have a maximum speed of 1.6 Gbps.
The 4Gb chip will make its way into 16GB registered DIMMs for servers, 8GB unbuffered DIMMs for workstations, and 8GB small outline DIMMs for laptops.
Using dual-die package technology, the 4Gb chip allows modules of up to 32GB - double that of the 2Gb chips which were state-of-the-art in September 2008.
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